BUK653R3-30C,127

MOSFET N-CH 30V 100A TO-220AB

Manufacturer NXP Semiconductors MPN BUK653R3-30C,127 SPQ 50 ECCN -- Schedule B -- RoHS -- Datasheet BUK653R3-30C,127.pdf

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	TO-220-3
-Drain to Source Voltage (Vdss)	30V
-Current - Continuous Drain (Id) @ 25°C	100A (Tc)
-Gate Charge (Qg) @ Vgs	114nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Family	FETs - Single
-Mounting Type	Through Hole
-Rds On (Max) @ Id, Vgs	3.3 mOhm @ 25A, 10V
-Power - Max	204W
-Supplier Device Package	TO-220AB
-Standard Package	50
-Packaging	Tube
-Series	TrenchMOS™
-Vgs(th) (Max) @ Id	2.8V @ 1mA
-Input Capacitance (Ciss) @ Vds	6960pF @ 25V