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BST82,235

MOSFET N-CH 100V 190MA SOT-23

Manufacturer NXP Semiconductors
MPN BST82,235
SPQ 10000
ECCN ECL99
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case TO-236-3, SC-59, SOT-23-3
-Drain to Source Voltage (Vdss) 100V
-Current - Continuous Drain (Id) @ 25°C 190mA (Ta)
-Packaging   Tape & Reel (TR)  
-Series TrenchMOS™
-Vgs(th) (Max) @ Id 2V @ 1mA
-Input Capacitance (Ciss) @ Vds 40pF @ 10V
-Rds On (Max) @ Id, Vgs 10 Ohm @ 150mA, 5V
-Power - Max 830mW
-Supplier Device Package SOT-23 (TO-236AB)
-Standard Package   10,000
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Single
-Mounting Type Surface Mount
-ECCN ECL99

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