BSO615N

MOSFET 2N-CH 60V 2.6A 8SOIC

制造商 Infineon Technologies 制造商零件编号 BSO615N 标准包装 2500 ECCN -- Schedule B -- RoHS -- 规格说明书 --

询价

需求数量		目标价格
联系电话		姓名
公司		邮箱

产品参数

-FET Feature	Logic Level Gate
-Package / Case	8-SOIC (0.154", 3.90mm Width)
-PCN Obsolescence/ EOL	Multiple Devices 22/Feb/2008
-Supplier Device Package	PG-DSO-8
-Gate Charge (Qg) @ Vgs	20nC @ 10V
-Packaging	Cut Tape (CT)
-Series	SIPMOS庐
-Vgs(th) (Max) @ Id	2V @ 20碌A
-Input Capacitance (Ciss) @ Vds	380pF @ 25V
-Rds On (Max) @ Id, Vgs	150 mOhm @ 2.6A, 4.5V
-Power - Max	2W
-Drain to Source Voltage (Vdss)	60V
-Standard Package	1
-Current - Continuous Drain (Id) @ 25掳C	2.6A
-FET Type	2 N-Channel (Dual)
-Family	FETs - Arrays
-Mounting Type	Surface Mount