BSO215C

MOSFET N/P-CH 20V 3.7A 8SOIC

Manufacturer Infineon Technologies MPN BSO215C SPQ 2500 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	8-SOIC (0.154", 3.90mm Width)
-PCN Obsolescence/ EOL	BSO215C 16/Mar/2004
-Supplier Device Package	8-SO
-Standard Package	2,500
-Packaging	Tape & Reel (TR)
-Series	SIPMOS®
-Vgs(th) (Max) @ Id	2V @ 10µA
-Input Capacitance (Ciss) @ Vds	246pF @ 25V
-Rds On (Max) @ Id, Vgs	100 mOhm @ 3.7A, 10V
-Power - Max	2W
-Drain to Source Voltage (Vdss)	20V
-Current - Continuous Drain (Id) @ 25°C	3.7A
-Gate Charge (Qg) @ Vgs	11.5nC @ 10V
-FET Type	N and P-Channel
-Family	FETs - Arrays
-Mounting Type	Surface Mount