BSO211P H

MOSFET 2P-CH 20V 4A 8DSO

Manufacturer Infineon Technologies MPN BSO211P H SPQ 2500 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss)	20V
-Current - Continuous Drain (Id) @ 25°C	4A
-Gate Charge (Qg) @ Vgs	10nC @ 4.5V
-FET Type	2 P-Channel (Dual)
-Family	FETs - Arrays
-Mounting Type	Surface Mount
-Rds On (Max) @ Id, Vgs	67 mOhm @ 4.6A, 4.5V
-Power - Max	1.6W
-Supplier Device Package	PG-DSO-8
-Standard Package	2,500
-Packaging	Tape & Reel (TR)
-Series	OptiMOS™
-Vgs(th) (Max) @ Id	1.2V @ 25µA
-Input Capacitance (Ciss) @ Vds	1095pF @ 15V