BSH112,235

MOSFET N-CH 60V 300MA SOT-23

Manufacturer NXP Semiconductors MPN BSH112,235 SPQ 10000 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	TO-236-3, SC-59, SOT-23-3
-Drain to Source Voltage (Vdss)	60V
-Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
-Packaging	Cut Tape (CT)
-Series	TrenchMOS™
-Vgs(th) (Max) @ Id	2V @ 1mA
-Input Capacitance (Ciss) @ Vds	40pF @ 10V
-Rds On (Max) @ Id, Vgs	5 Ohm @ 500mA, 10V
-Power - Max	830mW
-Supplier Device Package	SOT-23 (TO-236AB)
-Standard Package	1
-FET Type	MOSFET N-Channel, Metal Oxide
-Family	FETs - Single
-Mounting Type	Surface Mount