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BSH111,235

MOSFET N-CH 55V 0.335A SOT23

Manufacturer NXP Semiconductors
MPN BSH111,235
SPQ 10000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case TO-236-3, SC-59, SOT-23-3
-PCN Obsolescence/ EOL Multiple Devices 29/Dec/2014
-Supplier Device Package SOT-23 (TO-236AB)
-Gate Charge (Qg) @ Vgs 1nC @ 8V
-Packaging   Tape & Reel (TR)  
-Series TrenchMOS鈩�/a>
-Vgs(th) (Max) @ Id 1.3V @ 1mA
-Input Capacitance (Ciss) @ Vds 40pF @ 10V
-Rds On (Max) @ Id, Vgs 4 Ohm @ 500mA, 4.5V
-Power - Max 830mW
-Drain to Source Voltage (Vdss) 55V
-Standard Package   10,000
-Current - Continuous Drain (Id) @ 25掳C 335mA (Ta)
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Single
-Mounting Type Surface Mount

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