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BSD235N H6327

MOSFET 2N-CH 20V 0.95A SOT363

Manufacturer Infineon Technologies
MPN BSD235N H6327
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 6-VSSOP, SC-88, SOT-363
-Drain to Source Voltage (Vdss) 20V
-Standard Package   1
-Current - Continuous Drain (Id) @ 25掳C 950mA
-FET Type 2 N-Channel (Dual)
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 350 mOhm @ 950mA, 4.5V
-Power - Max 500mW
-Supplier Device Package PG-SOT363-6
-Gate Charge (Qg) @ Vgs 0.32nC @ 4.5V
-Packaging   Digi-Reel庐  
-Series OptiMOS鈩�/a>
-Vgs(th) (Max) @ Id 1.2V @ 1.6碌A
-Input Capacitance (Ciss) @ Vds 63pF @ 10V

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