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BS108G

MOSFET N-CH 200V 250MA TO-92

Manufacturer onsemi
MPN BS108G
SPQ 1000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case TO-226-3, TO-92-3 (TO-226AA)
-PCN Obsolescence/ EOL Multiple Devices 14/Apr/2010
-Supplier Device Package TO-92-3
-Standard Package   1,000
-FET Type MOSFET N-Channel, Metal Oxide
-Vgs(th) (Max) @ Id 1.5V @ 1mA
-Input Capacitance (Ciss) @ Vds 150pF @ 25V
-Rds On (Max) @ Id, Vgs 8 Ohm @ 100mA, 2.8V
-Power - Max 350mW
-Drain to Source Voltage (Vdss) 200V
-Current - Continuous Drain (Id) @ 25°C 250mA (Ta)
-Packaging   Tube  
-Family FETs - Single
-Mounting Type Through Hole

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