| -FET Feature |
Logic Level Gate |
| -Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| -PCN Obsolescence/ EOL |
Multiple Devices 03/Jan/2008 |
| -Supplier Device Package |
TO-92-3 |
| -Standard Package |
2,000 |
| -FET Type |
MOSFET N-Channel, Metal Oxide |
| -Vgs(th) (Max) @ Id |
3V @ 1mA |
| -Input Capacitance (Ciss) @ Vds |
60pF @ 25V |
| -Rds On (Max) @ Id, Vgs |
6.4 Ohm @ 250mA, 10V |
| -Power - Max |
350mW |
| -Drain to Source Voltage (Vdss) |
200V |
| -Current - Continuous Drain (Id) @ 25°C |
250mA (Ta) |
| -Packaging |
Tape & Reel (TR) |
| -Family |
FETs - Single |
| -Mounting Type |
Through Hole |
