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BLV57

Manufacturer Advanced Semiconductor, Inc.
MPN BLV57
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet BLV57.pdf

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Product parameter

-Emitter- Base Voltage VEBO: 3.5 V
-Operating Frequency: 860 MHz
-Continuous Collector Current: 2 A
-Manufacturer: Advanced Semiconductor, Inc.
-Minimum Operating Temperature: - 65 C
-Technology: Si
-RoHS:  Details
-Product Category: RF Bipolar Transistors
-Type: RF Bipolar Power
-Mounting Style: Screw
-Maximum DC Collector Current: 4 A
-Packaging: Tray
-DC Collector/Base Gain hfe Min: 15
-Pd - Power Dissipation: 77 W
-Transistor Polarity: NPN
-Brand: Advanced Semiconductor, Inc.
-Package / Case: SOT-161A
-Collector- Emitter Voltage VCEO Max: 27 V
-Transistor Type: Bipolar Power
-Maximum Operating Temperature: + 200 C

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