| -Operating Frequency: |
225 MHz |
| -Rds On - Drain-Source Resistance: |
300 mOhms |
| -Minimum Operating Temperature: |
- 65 C |
| -Transistor Polarity: |
N-Channel |
| -Brand: |
Advanced Semiconductor, Inc. |
| -Package / Case: |
SOT-262A |
| -Id - Continuous Drain Current: |
18 A |
| -Vds - Drain-Source Breakdown Voltage: |
125 V |
| -Vgs - Gate-Source Voltage: |
20 V |
| -Maximum Operating Temperature: |
+ 200 C |
| -Packaging: |
Tray |
| -Manufacturer: |
Advanced Semiconductor, Inc. |
| -Pd - Power Dissipation: |
500 W |
| -Technology: |
Si |
| -RoHS: |
Details |
| -Product Category: |
RF MOSFET Transistors |
| -Vgs th - Gate-Source Threshold Voltage: |
7 V |
| -Configuration: |
Single |
| -Mounting Style: |
SMD/SMT |
