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BCR 116W E6327

TRANS PREBIAS NPN 250MW SOT323-3

制造商 Infineon Technologies
制造商零件编号 BCR 116W E6327
标准包装 3000
ECCN --
Schedule B --
RoHS --
规格说明书 --

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产品参数

-Vce Saturation (Max) @ Ib, Ic 300mV @ 500碌A, 10mA
-Resistor - Base (R1) (Ohms) 4.7k
-Power - Max 250mW
-PCN Obsolescence/ EOL Multiple Devices 01/Mar/2011
-Supplier Device Package PG-SOT323-3
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V
-Frequency - Transition 150MHz
-Package / Case SC-70, SOT-323
-Transistor Type NPN - Pre-Biased
-Resistor - Emitter Base (R2) (Ohms) 47k
-Standard Package   3,000
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Single, Pre-Biased
-Current - Collector Cutoff (Max) 100nA (ICBO)

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