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BCR 108 B6327

TRANS PREBIAS NPN 200MW SOT23-3

Manufacturer Infineon Technologies
MPN BCR 108 B6327
SPQ 30000
ECCN --
Schedule B --
RoHS --
Datasheet BCR 108 B6327.pdf

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 500碌A, 10mA
-Resistor - Base (R1) (Ohms) 2.2k
-Power - Max 200mW
-Resistor - Emitter Base (R2) (Ohms) 47k
-Standard Package   30,000
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Single, Pre-Biased
-Current - Collector Cutoff (Max) 100nA (ICBO)
-Frequency - Transition 170MHz
-Package / Case TO-236-3, SC-59, SOT-23-3
-Transistor Type NPN - Pre-Biased
-Supplier Device Package PG-SOT23-3
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V

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