| -Emitter- Base Voltage VEBO: |
5 V |
| -Collector-Emitter Saturation Voltage: |
500 mV |
| -Packaging: |
Reel |
| -DC Collector/Base Gain hfe Min: |
63 at 150 mA at 2 V |
| -Pd - Power Dissipation: |
1.65 W |
| -Transistor Polarity: |
NPN |
| -Brand: |
NXP Semiconductors |
| -Package / Case: |
DFN2020D-3 |
| -Collector- Emitter Voltage VCEO Max: |
60 V |
| -Configuration: |
Single |
| -Maximum Operating Temperature: |
+ 150 C |
| -Maximum DC Collector Current: |
1 A |
| -DC Current Gain hFE Max: |
250 at 150 mA at 2 V |
| -Collector- Base Voltage VCBO: |
60 V |
| -Manufacturer: |
NXP |
| -Minimum Operating Temperature: |
- 55 C |
| -Factory Pack Quantity: |
3000 |
| -RoHS: |
Details |
| -Product Category: |
Bipolar Transistors - BJT |
| -Gain Bandwidth Product fT: |
180 MHz |
| -Mounting Style: |
SMD/SMT |
