| -Power - Max |
650mW |
| -Frequency - Transition |
180MHz |
| -Transistor Type |
NPN |
| -Current - Collector (Ic) (Max) |
1A |
| -Category |
Discrete Semiconductor Products |
| -Voltage - Collector Emitter Breakdown (Max) |
60V |
| -Mounting Type |
Surface Mount |
| -Operating Temperature |
150°C (TJ) |
| -Packaging |
Tape & Reel (TR) |
| -Package / Case |
3-UDFN, Exposed Pad |
| -Vce Saturation (Max) @ Ib, Ic |
500mV @ 50mA, 500mA |
| -Supplier Device Package |
3-HUSON (2x2) |
| -Part Status |
Active |
| -Manufacturer |
NXP Semiconductors |
| -Family |
Transistors - Bipolar (BJT) - Single |
| -Current - Collector Cutoff (Max) |
100nA (ICBO) |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 150mA, 2V |
