English 简体中文 日本語

AUIRFR3607

AUIRFR3607 , N沟道 MOSFET 晶体管, 80 A, Vds=75 V, 3针 TO-252AA封装

Manufacturer Infineon Technologies
MPN AUIRFR3607
SPQ 3000
ECCN EAR99
Schedule B --
RoHS --
Datasheet AUIRFR3607.pdf

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-FET Feature Logic Level Gate
-Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
-Drain to Source Voltage (Vdss) 75V
-Current - Continuous Drain (Id) @ 25°C 56A (Tc)
-Gate Charge (Qg) @ Vgs 84nC @ 10V
-Packaging   Tube  
-Series HEXFET®
-Vgs(th) (Max) @ Id 4V @ 100µA
-Input Capacitance (Ciss) @ Vds 3070pF @ 50V
-Rds On (Max) @ Id, Vgs 9 mOhm @ 46A, 10V
-Power - Max 140W
-Supplier Device Package D-Pak
-Standard Package   75
-Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Single
-Mounting Type Surface Mount
-ECCN EAR99

Copyright © 1997-2013 NetEase. All Rights Reserved.