| -FET Feature |
Logic Level Gate |
| -Package / Case |
TO-261-4, TO-261AA |
| -PCN Obsolescence/ EOL |
Multiple Devices 04/Apr/2014 |
| -Supplier Device Package |
SOT-223 |
| -Standard Package |
80 |
| -Product Training Modules |
High Voltage Integrated Circuits (HVIC Gate Drivers) |
| -FET Type |
MOSFET N-Channel, Metal Oxide |
| -Family |
FETs - Single |
| -Mounting Type |
Surface Mount |
| -Rds On (Max) @ Id, Vgs |
75 mOhm @ 2.8A, 10V |
| -Power - Max |
1W |
| -Drain to Source Voltage (Vdss) |
55V |
| -Current - Continuous Drain (Id) @ 25°C |
2.8A (Ta) |
| -Gate Charge (Qg) @ Vgs |
18.3nC @ 10V |
| -Packaging |
Tube |
| -Series |
HEXFET® |
| -Vgs(th) (Max) @ Id |
4V @ 250µA |
| -Input Capacitance (Ciss) @ Vds |
400pF @ 25V |
