| -FET Feature |
Standard |
| -PCN Assembly/Origin |
AUIRFxx Series Wafer Process 29/Jul/2013 |
| -Power - Max |
190W |
| -Supplier Device Package |
TO-220AB |
| -Standard Package |
50 |
| -Product Training Modules |
High Voltage Integrated Circuits (HVIC Gate Drivers) |
| -FET Type |
MOSFET N-Channel, Metal Oxide |
| -Family |
FETs - Single |
| -Mounting Type |
Through Hole |
| -Rds On (Max) @ Id, Vgs |
14 mOhm @ 44A, 10V |
| -Package / Case |
TO-220-3 |
| -Drain to Source Voltage (Vdss) |
100V |
| -Current - Continuous Drain (Id) @ 25°C |
73A (Tc) |
| -Gate Charge (Qg) @ Vgs |
140nC @ 10V |
| -Packaging |
Tube |
| -Series |
HEXFET® |
| -Vgs(th) (Max) @ Id |
4V @ 100µA |
| -Input Capacitance (Ciss) @ Vds |
3550pF @ 50V |
