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AUIRF7669L2TR

Single N-Channel 100V 4.4 mOhm 81nC Automotive HEXFET® Power Mosfet - DirectFET®

Manufacturer Infineon Technologies
MPN AUIRF7669L2TR
SPQ 1
ECCN EAR99
Schedule B --
RoHS --
Datasheet AUIRF7669L2TR.pdf
SP1027
Dollar $10.05563
RMB ¥83.51852
Stock type SP1027
Stock num 15463
Stepped
num price
58+ $10.05563
100+ $9.55188
500+ $9.04813
1000+ $8.54438
10000+ $8.04063

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Product parameter

-FET Feature Standard
-Package / Case DirectFET™ Isometric L8
-Drain to Source Voltage (Vdss) 100V
-Current - Continuous Drain (Id) @ 25°C 19A (Ta), 114A (Tc)
-Gate Charge (Qg) @ Vgs 120nC @ 10V
-Packaging   Tape & Reel (TR)  
-Design Resources AUIRF7669L2TR1 Saber Model AUIRF7669L2TR1 Spice Model
-Family FETs - Single
-Mounting Type Surface Mount
-ECCN EAR99
-Rds On (Max) @ Id, Vgs 4.4 mOhm @ 68A, 10V
-Power - Max 3.3W
-Supplier Device Package DIRECTFET L8
-Standard Package   4,000
-Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
-FET Type MOSFET N-Channel, Metal Oxide
-Series HEXFET®
-Vgs(th) (Max) @ Id 5V @ 250µA
-Input Capacitance (Ciss) @ Vds 5660pF @ 25V

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