| -FET Feature |
Standard |
| -Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| -Drain to Source Voltage (Vdss) |
150V |
| -Current - Continuous Drain (Id) @ 25°C |
13A (Tc) |
| -Gate Charge (Qg) @ Vgs |
66nC @ 10V |
| -Packaging |
Tube |
| -Series |
HEXFET® |
| -Vgs(th) (Max) @ Id |
4V @ 250µA |
| -Input Capacitance (Ciss) @ Vds |
860pF @ 25V |
| -Rds On (Max) @ Id, Vgs |
290 mOhm @ 6.6A, 10V |
| -Power - Max |
3.8W |
| -Supplier Device Package |
D2PAK |
| -Standard Package |
50 |
| -Product Training Modules |
High Voltage Integrated Circuits (HVIC Gate Drivers) |
| -FET Type |
MOSFET P-Channel, Metal Oxide |
| -Family |
FETs - Single |
| -Mounting Type |
Surface Mount |
| -ECCN |
EAR99 |
