| -FET Feature |
Standard |
| -PCN Assembly/Origin |
AUIRFxx Series Wafer Process 29/Jul/2013 |
| -Power - Max |
300W |
| -Supplier Device Package |
D2PAK |
| -Gate Charge (Qg) @ Vgs |
290nC @ 10V |
| -Product Training Modules |
High Voltage Integrated Circuits (HVIC Gate Drivers) |
| -FET Type |
MOSFET N-Channel, Metal Oxide |
| -Family |
FETs - Single |
| -Mounting Type |
Surface Mount |
| -Rds On (Max) @ Id, Vgs |
3.3 mOhm @ 75A, 10V |
| -Package / Case |
TO-263-3, D虏Pak (2 Leads + Tab), TO-263AB |
| -Drain to Source Voltage (Vdss) |
55V |
| -Standard Package |
50 |
| -Current - Continuous Drain (Id) @ 25掳C |
160A (Tc) |
| -Packaging |
Tube |
| -Series |
HEXFET庐 |
| -Vgs(th) (Max) @ Id |
4V @ 250碌A |
| -Input Capacitance (Ciss) @ Vds |
7960pF @ 25V |
