| -FET Feature |
Standard |
| -Package / Case |
TO-262-3 Long Leads, I²Pak, TO-262AA |
| -Power - Max |
231W |
| -Supplier Device Package |
TO-262 |
| -Standard Package |
50 |
| -Product Training Modules |
High Voltage Integrated Circuits (HVIC Gate Drivers) |
| -FET Type |
MOSFET N-Channel, Metal Oxide |
| -Series |
HEXFET® |
| -Vgs(th) (Max) @ Id |
4V @ 150µA |
| -Input Capacitance (Ciss) @ Vds |
6320pF @ 25V |
| -Rds On (Max) @ Id, Vgs |
2.4 mOhm @ 75A, 10V |
| -PCN Assembly/Origin |
AUIRFxx Series Wafer Process 29/Jul/2013 |
| -Drain to Source Voltage (Vdss) |
30V |
| -Current - Continuous Drain (Id) @ 25°C |
160A (Tc) |
| -Gate Charge (Qg) @ Vgs |
240nC @ 10V |
| -Packaging |
Tube |
| -Design Resources |
AUIRF2903ZL Saber Model AUIRF2903ZL Spice Model |
| -Family |
FETs - Single |
| -Mounting Type |
Through Hole |
