ATP107-TL-H

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Manufacturer onsemi MPN ATP107-TL-H SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet ATP107-TL-H.pdf

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	ATPAK (2 leads+tab)
-Drain to Source Voltage (Vdss)	40V
-Current - Continuous Drain (Id) @ 25°C	50A (Ta)
-Gate Charge (Qg) @ Vgs	47nC @ 10V
-Packaging	Tape & Reel (TR)
-Family	FETs - Single
-Input Capacitance (Ciss) @ Vds	2400pF @ 20V
-Rds On (Max) @ Id, Vgs	17 mOhm @ 25A, 10V
-Power - Max	50W
-Supplier Device Package	ATPAK
-Standard Package	3,000
-PCN Design/Specification	Lead Frame Material Update 09/Apr/2014
-FET Type	MOSFET P-Channel, Metal Oxide
-Mounting Type	Surface Mount