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| Demand quantity | Target price | ||
| Contact number | name | ||
| company | |||
| -Product: | RF JFET |
| -Operating Frequency: | 2 GHz |
| -Gain: | 17.5 dB |
| -Manufacturer: | Broadcom Limited |
| -Transistor Polarity: | N-Channel |
| -Technology: | GaAs |
| -RoHS: | Details |
| -Vgs - Gate-Source Breakdown Voltage: | - 5 V to 1 V |
| -Id - Continuous Drain Current: | 120 mA |
| -Configuration: | Single Dual Source |
| -Type: | GaAs EpHEMT |
| -Mounting Style: | SMD/SMT |
| -P1dB - Compression Point: | 21.4 dBm |
| -Packaging: | Reel |
| -Forward Transconductance - Min: | 398 mmho |
| -Pd - Power Dissipation: | 360 mW |
| -Factory Pack Quantity: | 10000 |
| -Brand: | Broadcom / Avago |
| -Package / Case: | Mini PAK |
| -Product Category: | RF JFET Transistors |
| -Vds - Drain-Source Breakdown Voltage: | 5 V |
| -NF - Noise Figure: | 0.5 dB |
| -Transistor Type: | EpHEMT |
| -Maximum Operating Temperature: | + 150 C |
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