| -Product: |
RF JFET |
| -Operating Frequency: |
2 GHz |
| -Packaging: |
Reel |
| -Pd - Power Dissipation: |
400 mW |
| -Package / Case: |
Mini PAK |
| -Configuration: |
Single Dual Source |
| -Mounting Style: |
SMD/SMT |
| -Gain: |
15 dB |
| -Forward Transconductance - Min: |
440 mmho |
| -Transistor Polarity: |
N-Channel |
| -Brand: |
Broadcom / Avago |
| -Vgs - Gate-Source Breakdown Voltage: |
- 5 V |
| -Id - Continuous Drain Current: |
305 mA |
| -Type: |
GaAs pHEMT |
| -Maximum Operating Temperature: |
+ 160 C |
| -P1dB - Compression Point: |
19 dBm |
| -Width: |
1.2 mm |
| -Minimum Operating Temperature: |
- 65 C |
| -Technology: |
GaAs |
| -Height: |
0.7 mm |
| -NF - Noise Figure: |
0.6 dB |
| -Maximum Drain Gate Voltage: |
- 5 V |
| -Length: |
1.44 mm |
| -Manufacturer: |
Broadcom Limited |
| -Factory Pack Quantity: |
3000 |
| -RoHS: |
Details |
| -Product Category: |
RF JFET Transistors |
| -Vds - Drain-Source Breakdown Voltage: |
5.5 V |
| -Transistor Type: |
pHEMT |
