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APTC60DSKM45CT1G

MOSFET 2N-CH 600V 49A SP1

Manufacturer Microchip Technology
MPN APTC60DSKM45CT1G
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Super Junction
-Package / Case SP1
-Drain to Source Voltage (Vdss) 600V
-Current - Continuous Drain (Id) @ 25°C 49A
-Gate Charge (Qg) @ Vgs 150nC @ 10V
-FET Type 2 N-Channel (Dual)
-Family FETs - Modules
-Mounting Type Chassis Mount
-Rds On (Max) @ Id, Vgs 45 mOhm @ 24.5A, 10V
-Power - Max 250W
-Supplier Device Package SP1
-Standard Package   1
-Packaging   Bulk  
-Series CoolMOS™
-Vgs(th) (Max) @ Id 3.9V @ 3mA
-Input Capacitance (Ciss) @ Vds 7200pF @ 25V

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