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APTC60DAM35T1G

MOSFET N-CH 600V 72A SP1

Manufacturer Microchip Technology
MPN APTC60DAM35T1G
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case SP1
-Drain to Source Voltage (Vdss) 600V
-Standard Package   1
-Current - Continuous Drain (Id) @ 25掳C 72A
-FET Type MOSFET N-Channel, Metal Oxide
-Vgs(th) (Max) @ Id 3.9V @ 5.4mA
-Input Capacitance (Ciss) @ Vds 14000pF @ 25V
-Rds On (Max) @ Id, Vgs 35 mOhm @ 72A, 10V
-Power - Max 416W
-Supplier Device Package SP1
-Gate Charge (Qg) @ Vgs 518nC @ 10V
-Packaging   Bulk  
-Family FETs - Modules
-Mounting Type Chassis Mount

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