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APTC60AM70T1G

MOSFET 2N-CH 600V 39A SP1

Manufacturer Microchip Technology
MPN APTC60AM70T1G
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Standard
-Package / Case SP1
-Drain to Source Voltage (Vdss) 600V
-Current - Continuous Drain (Id) @ 25°C 39A
-Gate Charge (Qg) @ Vgs 259nC @ 10V
-FET Type 2 N-Channel (Half Bridge)
-Vgs(th) (Max) @ Id 3.9V @ 2.7mA
-Input Capacitance (Ciss) @ Vds 7000pF @ 25V
-Rds On (Max) @ Id, Vgs 70 mOhm @ 39A, 10V
-Power - Max 250W
-Supplier Device Package SP1
-Standard Package   1
-Packaging   Bulk  
-Family FETs - Modules
-Mounting Type Chassis Mount

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