APTC60AM45T1G

MOSFET 2N-CH 600V 49A SP1

Manufacturer Microchip Technology MPN APTC60AM45T1G SPQ 1000 ECCN -- Schedule B -- RoHS -- Datasheet APTC60AM45T1G.pdf

Quote

Demand quantity		Target price
Contact number		name
company		email

Product parameter

-FET Feature	Standard
-Package / Case	SP1
-Drain to Source Voltage (Vdss)	600V
-Current - Continuous Drain (Id) @ 25°C	49A
-Gate Charge (Qg) @ Vgs	150nC @ 10V
-FET Type	2 N-Channel (Half Bridge)
-Vgs(th) (Max) @ Id	3.9V @ 3mA
-Input Capacitance (Ciss) @ Vds	7200pF @ 25V
-Rds On (Max) @ Id, Vgs	45 mOhm @ 24.5A, 10V
-Power - Max	250W
-Supplier Device Package	SP1
-Standard Package	1
-Packaging	Bulk
-Family	FETs - Modules
-Mounting Type	Chassis Mount