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APT25GP120BG

Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3

Manufacturer Microchip Technology
MPN APT25GP120BG
SPQ 1000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Current - Collector Pulsed (Icm) 90A
-Gate Charge 110nC
-Switching Energy 500碌J (on), 438碌J (off)
-Input Type Standard
-Package / Case TO-247-3
-Test Condition 600V, 25A, 5 Ohm, 15V
-Catalog Drawings TO-247 Front
-Current - Collector (Ic) (Max) 69A
-Online Catalog Standard IGBTs
-Series POWER MOS 7庐
-Power - Max 417W
-Mounting Type Through Hole
-Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 25A
-Td (on/off) @ 25掳C 12ns/70ns
-IGBT Type PT
-Supplier Device Package TO-247 [B]
-Standard Package   30
-Packaging   Tube  
-Voltage - Collector Emitter Breakdown (Max) 1200V
-Family IGBTs - Single

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