APT17F80B

Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 70A; 500W; TO247-3

Manufacturer Microchip Technology MPN APT17F80B SPQ 1000 ECCN -- Schedule B -- RoHS -- Datasheet --

Quote

Demand quantity		Target price
Contact number		name
company		email

Product parameter

-FET Feature	Standard
-Package / Case	TO-247-3
-Drain to Source Voltage (Vdss)	800V
-Current - Continuous Drain (Id) @ 25°C	18A (Tc)
-Gate Charge (Qg) @ Vgs	122nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Series	POWER MOS 8™
-Vgs(th) (Max) @ Id	5V @ 1mA
-Input Capacitance (Ciss) @ Vds	3757pF @ 25V
-Rds On (Max) @ Id, Vgs	580 mOhm @ 9A, 10V
-Power - Max	500W
-Supplier Device Package	TO-247 [B]
-Standard Package	30
-Packaging	Tube
-Online Catalog	N-Channel Standard FETs
-Family	FETs - Single
-Mounting Type	Through Hole