APT10M11B2VFRG

MOSFET N-CH 100V 100A T-MAX

Manufacturer Microchip Technology MPN APT10M11B2VFRG SPQ 30 ECCN -- Schedule B -- RoHS -- Datasheet --

Quote

Demand quantity		Target price
Contact number		name
company		email

Product parameter

-FET Feature	Standard
-Package / Case	TO-247-3 Variant
-Drain to Source Voltage (Vdss)	100V
-Current - Continuous Drain (Id) @ 25°C	100A (Tc)
-Gate Charge (Qg) @ Vgs	450nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Family	FETs - Single
-Mounting Type	Through Hole
-Rds On (Max) @ Id, Vgs	11 mOhm @ 500mA, 10V
-Power - Max	520W
-Supplier Device Package	T-MAX™
-Standard Package	30
-Packaging	Tube
-Series	POWER MOS V®
-Vgs(th) (Max) @ Id	4V @ 2.5mA
-Input Capacitance (Ciss) @ Vds	10300pF @ 25V