AOB412L

MOSFET N-CH 100V 8.2A TO263

Manufacturer Alpha and Omega Semiconductor, Inc. MPN AOB412L SPQ 800 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Standard
-Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-Drain to Source Voltage (Vdss)	100V
-Current - Continuous Drain (Id) @ 25°C	8.2A (Ta), 60A (Tc)
-Gate Charge (Qg) @ Vgs	54nC @ 10V
-Other Related Documents	AOS Green Policy
-Series	SDMOS™
-Vgs(th) (Max) @ Id	3.8V @ 250µA
-Input Capacitance (Ciss) @ Vds	3220pF @ 50V
-Rds On (Max) @ Id, Vgs	15.5 mOhm @ 20A, 10V
-Power - Max	2.6W
-Supplier Device Package	TO-263 (D2Pak)
-Standard Package	800
-Packaging	Tape & Reel (TR)
-FET Type	MOSFET N-Channel, Metal Oxide
-Family	FETs - Single
-Mounting Type	Surface Mount