AOB11S65L

Transistor: N-MOSFET; unipolar; 650V; 8A; 198W; TO263

制造商 Alpha and Omega Semiconductor, Inc. 制造商零件编号 AOB11S65L 标准包装 1 ECCN -- Schedule B -- RoHS -- 规格说明书 --

询价

需求数量		目标价格
联系电话		姓名
公司		邮箱

产品参数

-FET Feature	Standard
-Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-Drain to Source Voltage (Vdss)	650V
-Current - Continuous Drain (Id) @ 25°C	11A (Tc)
-Gate Charge (Qg) @ Vgs	13.2nC @ 10V
-Other Related Documents	AOS Green Policy
-Online Catalog	N-Channel Standard FETs
-Family	FETs - Single
-Mounting Type	Surface Mount
-Rds On (Max) @ Id, Vgs	399 mOhm @ 5.5A, 10V
-Power - Max	198W
-Supplier Device Package	TO-263 (D2Pak)
-Standard Package	800
-Packaging	Tape & Reel (TR)
-FET Type	MOSFET N-Channel, Metal Oxide
-Series	aMOS™
-Vgs(th) (Max) @ Id	4V @ 250µA
-Input Capacitance (Ciss) @ Vds	646pF @ 100V