ALD1110EPAL

MOSFET 2N-CH 10V 8DIP

Manufacturer Advanced Linear Devices, Inc. MPN ALD1110EPAL SPQ 50 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Standard
-Package / Case	8-DIP (0.300", 7.62mm)
-Drain to Source Voltage (Vdss)	10V
-Standard Package	50
-FET Type	2 N-Channel (Dual) Matched Pair
-Family	FETs - Arrays
-Mounting Type	Through Hole
-Rds On (Max) @ Id, Vgs	500 Ohm @ 5V
-Power - Max	600mW
-Supplier Device Package	8-PDIP
-Packaging	Tube
-Series	EPAD庐
-Vgs(th) (Max) @ Id	1.01V @ 1碌A
-Input Capacitance (Ciss) @ Vds	2.5pF @ 5V