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SI7994DP-T1-GE3

Si7994DP Series Dual N-Channel 30 V 56 mOhm SMT Power Mosfet - PowerPAK-SO-8

Manufacturer Vishay
MPN SI7994DP-T1-GE3
SPQ 3000
ECCN EAR99
Schedule B --
RoHS --
Datasheet SI7994DP-T1-GE3.pdf
SP1027
Dollar $2.91245
RMB ¥24.18978
Stock type SP1027
Stock num 2547
Stepped
num price
1+ $2.91245
10+ $2.8675
25+ $2.8241
100+ $2.77915
250+ $2.7342
500+ $2.68925
1000+ $2.6443

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Product parameter

-Minimum Operating Temperature: - 55 C
-Packaging: Reel
-Pd - Power Dissipation: 3.5 W
-Package / Case: SOIC-8
-Configuration: Dual Dual Drain
-Unit Weight: 0.017870 oz
-Number of Channels: 2 Channel
-Typical Turn-On Delay Time: 35 ns
-Manufacturer: Vishay
-Factory Pack Quantity: 3000
-Brand: Vishay Semiconductors
-Typical Turn-Off Delay Time: 40 ns
-Product Category: MOSFET
-Vds - Drain-Source Breakdown Voltage: 30 V
-Transistor Type: 2 N-Channel
-ECCN EAR99
-Rds On - Drain-Source Resistance: 5.6 mOhms
-Width: 5.89 mm
-Technology: Si
-Height: 1.04 mm
-Vgs - Gate-Source Voltage: 20 V
-Mounting Style: SMD/SMT
-Fall Time: 15 ns
-Length: 4.9 mm
-Transistor Polarity: N-Channel
-Channel Mode: Enhancement
-Part # Aliases: SI7994DP-GE3
-RoHS:  Details
-Id - Continuous Drain Current: 20 A
-Rise Time: 15 ns
-Maximum Operating Temperature: + 150 C

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