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IDH04SG60C

DIODE SCHOTTKY 600V 4A TO220-2

Manufacturer Infineon Technologies
MPN IDH04SG60C
SPQ 1
ECCN --
Schedule B --
RoHS RoHS Compliant
Datasheet IDH04SG60C.pdf

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Product parameter

-Operating Temperature - Junction -55°C ~ 175°C
-Package / Case TO-220-2
-Supplier Device Package PG-TO220-2
-Speed No Recovery Time > 500mA (Io)
-Current - Reverse Leakage @ Vr 25µA @ 600V
-Family Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 600V
-Packaging Tube  
-Current - Average Rectified (Io) 4A (DC)
-Capacitance @ Vr, F 80pF @ 1V, 1MHz
-Diode Type Silicon Carbide Schottky
-Reverse Recovery Time (trr) 0ns
-Series thinQ!™
-Mounting Type Through Hole
-Voltage - Forward (Vf) (Max) @ If 2.3V @ 4A
-RoHS Lead free / RoHS Compliant

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