SI1029X-T1-GE3

Dual N & P Channel 60 V 1.4 / 4 Ohm Surface Mount Mosfet - SC-89-6

Manufacturer Vishay MPN SI1029X-T1-GE3 SPQ 1 ECCN EAR99 Schedule B -- RoHS -- Datasheet SI1029X-T1-GE3.pdf

SP1027 Dollar $0.20042 RMB ￥1.66462 Stock type SP1027 Stock num 75000 Stepped num price 3000+ $0.20042 6000+ $0.1984 9000+ $0.1874 24000+ $0.18321 30000+ $0.17841 45000+ $0.1767 SP1036 Dollar $0.20372 RMB ￥1.69203 Stock type SP1036 Stock num 4578 Stepped num price 1+ $0.20372 100+ $0.16326 750+ $0.14593 1500+ $0.13711 3000+ $0.13061 SP1034 Dollar $1.32788 RMB ￥11.0289 Stock type SP1034 Stock num 1560 Stepped num price 20+ $1.32788 SP1034 Dollar $1.32788 RMB ￥11.0289 Stock type SP1034 Stock num 1560 Stepped num price 20+ $1.32788

Quote

Demand quantity		Target price
Contact number		name
company		email

Product parameter

-Power - Max	250mW
-Rds On (Max) @ Id, Vgs	1.4 Ohm @ 500mA, 10V
-Drain to Source Voltage (Vdss)	60V
-Current - Continuous Drain (Id) @ 25°C	305mA, 190mA
-Part Status	Active
-Manufacturer	Vishay Siliconix
-Series	TrenchFET®
-Vgs(th) (Max) @ Id	2.5V @ 250µA
-Operating Temperature	-55°C ~ 150°C (TJ)
-Packaging	Digi-Reel®
-Package / Case	SOT-563, SOT-666
-FET Feature	Logic Level Gate
-Supplier Device Package	SC-89-6
-Gate Charge (Qg) @ Vgs	0.75nC @ 4.5V
-Category	Discrete Semiconductor Products
-FET Type	N and P-Channel
-Family	Transistors - FETs, MOSFETs - Arrays
-Mounting Type	Surface Mount
-Input Capacitance (Ciss) @ Vds	30pF @ 25V
-ECCN	EAR99