RJH60D5BDPQ-E0#T2

IGBT 600V 75A 200W TO-247

制造商 Renesas 制造商零件编号 RJH60D5BDPQ-E0#T2 标准包装 1 ECCN -- Schedule B -- RoHS -- 规格说明书 --

询价

需求数量		目标价格
联系电话		姓名
公司		邮箱

产品参数

-Test Condition	300V, 37A, 5 Ohm, 15V
-Package / Case	TO-247-3
-Supplier Device Package	TO-247
-Current - Collector (Ic) (Max)	75A
-Category	Discrete Semiconductor Products
-Reverse Recovery Time (trr)	25ns
-Voltage - Collector Emitter Breakdown (Max)	600V
-Mounting Type	Through Hole
-Switching Energy	400µJ (on), 810µJ (off)
-Packaging	Tube
-Power - Max	200W
-IGBT Type	Trench
-Td (on/off) @ 25°C	50ns/130ns
-Part Status	Active
-Manufacturer	Renesas Electronics America
-Gate Charge	78nC
-Family	Transistors - IGBTs - Single
-Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 37A
-Input Type	Standard