SI4288DY-T1-GE3

Dual N-Channel 40 V 20 mOhm 2 W Surface Mount TrenchFET Mosfet - SOIC-8

Manufacturer Vishay MPN SI4288DY-T1-GE3 SPQ 1 ECCN EAR99 Schedule B -- RoHS -- Datasheet SI4288DY-T1-GE3.pdf

SP1036 Dollar $0.58081 RMB ￥4.824 Stock type SP1036 Stock num 13429 Stepped num price 1+ $0.58081 100+ $0.48545 1250+ $0.44066 2500+ $0.40888 SP1027 Dollar $0.73315 RMB ￥6.08929 Stock type SP1027 Stock num 7500 Stepped num price 2500+ $0.73315 5000+ $0.72137

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Product parameter

-Manufacturer:	Vishay
-Packaging:	Reel
-Series:	SI4
-Minimum Operating Temperature:	- 55 C
-Factory Pack Quantity:	2500
-Brand:	Vishay Semiconductors
-Tradename:	TrenchFET
-Package / Case:	SOIC-8
-Id - Continuous Drain Current:	9.2 A
-Configuration:	Dual
-Unit Weight:	0.017870 oz
-Mounting Style:	SMD/SMT
-ECCN	EAR99
-Rds On - Drain-Source Resistance:	20 mOhms
-Number of Channels:	2 Channel
-Pd - Power Dissipation:	3.1 W
-Transistor Polarity:	N-Channel
-Technology:	Si
-Part # Aliases:	SI4288DY-GE3
-RoHS:	Details
-Product Category:	MOSFET
-Vds - Drain-Source Breakdown Voltage:	40 V
-Vgs - Gate-Source Voltage:	20 V
-Transistor Type:	2 N-Channel
-Maximum Operating Temperature:	+ 150 C