STGWT60H60DLFB

STMicroelectronics STGWT60H60DLFB, N沟道 IGBT 晶体管, 80 A, Vce=650 V, 3针 TO-3P封装

Manufacturer STMicroelectronics MPN STGWT60H60DLFB SPQ 30 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-Current - Collector Pulsed (Icm)	240A
-Power - Max	375W
-IGBT Type	Trench Field Stop
-Td (on/off) @ 25°C	-/160ns
-Part Status	Active
-Manufacturer	STMicroelectronics
-Voltage - Collector Emitter Breakdown (Max)	600V
-Mounting Type	Through Hole
-Switching Energy	626µJ (off)
-Packaging	Tube
-Package / Case	TO-3P-3, SC-65-3
-Test Condition	400V, 60A, 5 Ohm, 15V
-Supplier Device Package	TO-3P
-Current - Collector (Ic) (Max)	80A
-Category	Discrete Semiconductor Products
-Gate Charge	306nC
-Family	Transistors - IGBTs - Single
-Vce(on) (Max) @ Vge, Ic	2V @ 15V, 60A
-Input Type	Standard