| -Qg - Gate Charge: |
5.4 nC |
| -Packaging: |
Reel |
| -Minimum Operating Temperature: |
- 55 C |
| -Technology: |
Si |
| -Configuration: |
Dual |
| -Mounting Style: |
SMD/SMT |
| -Number of Channels: |
2 Channel |
| -Manufacturer: |
Diodes Incorporated |
| -Transistor Polarity: |
N-Channel |
| -Brand: |
Diodes Incorporated |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
60 V |
| -Maximum Operating Temperature: |
+ 150 C |
| -Rds On - Drain-Source Resistance: |
48 mOhms |
| -Product: |
MOSFET Small Signal |
| -Pd - Power Dissipation: |
1.25 W |
| -Package / Case: |
SOIC-8 |
| -Vgs - Gate-Source Voltage: |
20 V |
| -Unit Weight: |
0.002610 oz |
| -Forward Transconductance - Min: |
19.2 S |
| -Series: |
DMN60 |
| -Factory Pack Quantity: |
2500 |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
3.3 A |
| -Transistor Type: |
2 N-Channel |
| -ECCN |
EAR99 |
