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SI1034X-T1-GE3

Single N-Channel 20 V 10 Ohm Surface Mount Power MosFet - SC-89-6

Manufacturer Vishay
MPN SI1034X-T1-GE3
SPQ 1
ECCN EAR99
Schedule B --
RoHS --
Datasheet SI1034X-T1-GE3.pdf

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Product parameter

-Power - Max 250mW
-Rds On (Max) @ Id, Vgs 5 Ohm @ 200mA, 4.5V
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 180mA
-Part Status Active
-Manufacturer Vishay Siliconix
-Series TrenchFET®
-Vgs(th) (Max) @ Id 1.2V @ 250µA
-Operating Temperature -55°C ~ 150°C (TJ)
-ECCN EAR99
-Package / Case SOT-563, SOT-666
-FET Feature Logic Level Gate
-Supplier Device Package SC-89-6
-Gate Charge (Qg) @ Vgs 0.75nC @ 4.5V
-Category Discrete Semiconductor Products
-FET Type 2 N-Channel (Dual)
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Packaging Digi-Reel®

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