| -Qg - Gate Charge: |
37.6 nC, 33.7 nC |
| -Packaging: |
Reel |
| -Minimum Operating Temperature: |
- 55 C |
| -Technology: |
Si |
| -Vgs th - Gate-Source Threshold Voltage: |
800 mV, - 1.8 V |
| -Vgs - Gate-Source Voltage: |
+/- 20 V, +/- 20 V |
| -Mounting Style: |
SMD/SMT |
| -Fall Time: |
5.3 ns, 30.9 ns |
| -Forward Transconductance - Min: |
12.6 S, 16.6 S |
| -Series: |
DMC4040 |
| -Factory Pack Quantity: |
2500 |
| -Brand: |
Diodes Incorporated |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
7.5 A, - 7.5 A |
| -Rise Time: |
15.1 ns, 14.7 ns |
| -Maximum Operating Temperature: |
+ 150 C |
| -Rds On - Drain-Source Resistance: |
13 mOhms, 18 mOhms |
| -Product: |
MOSFET Small Signal |
| -Pd - Power Dissipation: |
1.25 W |
| -Package / Case: |
SO-8 |
| -Configuration: |
1 N-Channel, 1 P-Channel |
| -Unit Weight: |
0.002610 oz |
| -Number of Channels: |
2 Channel |
| -Typical Turn-On Delay Time: |
8.1 ns, 6.9 ns |
| -Manufacturer: |
Diodes Incorporated |
| -Transistor Polarity: |
N-Channel, P-Channel |
| -Channel Mode: |
Enhancement |
| -Typical Turn-Off Delay Time: |
24.3 ns, 53.7 ns |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
40 V, - 40 V |
| -Transistor Type: |
1 N-Channel, 1 P-Channel |
| -ECCN |
EAR99 |
