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STGW35NB60SD

Transistor: IGBT; 600V; 35A; 200W; TO247-3

Manufacturer STMicroelectronics
MPN STGW35NB60SD
SPQ 1
ECCN ECL99
Schedule B --
RoHS --
Datasheet STGW35NB60SD.pdf

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Product parameter

-Length: 15.75 mm
-Packaging: Tube
-Manufacturer: STMicroelectronics
-Minimum Operating Temperature: - 55 C
-Brand: STMicroelectronics
-Package / Case: TO-247-3
-Collector- Emitter Voltage VCEO Max: 600 V
-Configuration: Single
-Mounting Style: Through Hole
-Maximum Operating Temperature: + 150 C
-Continuous Collector Current Ic Max: 70 A
-Width: 5.15 mm
-Series: 600-650V IGBTs
-Factory Pack Quantity: 30
-RoHS:  Details
-Product Category: IGBT Transistors
-Height: 20.15 mm
-Unit Weight: 1.340411 oz
-Maximum Gate Emitter Voltage: +/- 20 V
-ECCN ECL99

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