5LN01C-TB-H

MOSFET N-CH 50V 100MA CP

Manufacturer onsemi MPN 5LN01C-TB-H SPQ 3000 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate, 2.5V Drive
-Package / Case	TO-236-3, SC-59, SOT-23-3
-Drain to Source Voltage (Vdss)	50V
-Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
-Gate Charge (Qg) @ Vgs	1.57nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Mounting Type	Surface Mount
-Rds On (Max) @ Id, Vgs	7.8 Ohm @ 50mA, 4V
-Power - Max	250mW
-Supplier Device Package	3-CP
-Standard Package	3,000
-Packaging	Tape & Reel (TR)
-Family	FETs - Single
-Input Capacitance (Ciss) @ Vds	6.6pF @ 10V