| -Packaging: |
Tube |
| -Operating Frequency: |
1 GHz |
| -Minimum Operating Temperature: |
- 65 C |
| -Technology: |
Si |
| -Height: |
3.5 mm |
| -Vgs - Gate-Source Voltage: |
+/- 20 V |
| -Gain: |
14.5 dB at 500 MHz |
| -Forward Transconductance - Min: |
2.5 S |
| -Series: |
PD55025-E |
| -Factory Pack Quantity: |
50 |
| -Brand: |
STMicroelectronics |
| -Product Category: |
RF MOSFET Transistors |
| -Vds - Drain-Source Breakdown Voltage: |
40 V |
| -Maximum Operating Temperature: |
+ 150 C |
| -Width: |
9.4 mm |
| -Output Power: |
25 W |
| -Pd - Power Dissipation: |
79 W |
| -Package / Case: |
PowerSO-10RF (Straight Lead) |
| -Configuration: |
Single |
| -Mounting Style: |
SMD/SMT |
| -Length: |
7.5 mm |
| -Manufacturer: |
STMicroelectronics |
| -Transistor Polarity: |
N-Channel |
| -Channel Mode: |
Enhancement |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
7 A |
| -Type: |
RF Power MOSFET |
