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2N5551

Transistor: NPN; bipolar; 160V; 0.6A; 625mW; TO92

Manufacturer Vishay
MPN 2N5551
SPQ 1000
ECCN ECL99
Schedule B --
RoHS --
Datasheet 2N5551.pdf

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
-Package / Case TO-226-3, TO-92-3 (TO-226AA)
-Transistor Type NPN
-Current - Collector (Ic) (Max) 600mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 160V
-Mounting Type Through Hole
-DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
-ECCN ECL99
-Frequency - Transition 300MHz
-Power - Max 625mW
-Supplier Device Package TO-92
-Part Status Active
-Manufacturer Central Semiconductor Corp
-Family Transistors - Bipolar (BJT) - Single
-Current - Collector Cutoff (Max) 50nA (ICBO)
-Packaging Bulk

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