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STGE200NB60S

STGE200NB60S Series N-Channel 600 V 200 A Low Drop PowerMESH IGBT - ISOTOP

制造商 STMicroelectronics
制造商零件编号 STGE200NB60S
标准包装 1
ECCN EAR99
Schedule B --
RoHS --
规格说明书 STGE200NB60S.pdf
SP1027库存
美元价格 $43.33351
人民币价格 ¥359.91287
库存类型 SP1027
库存数量 150
阶梯价格
数量 价格
1+ $43.33351
5+ $42.89997
10+ $32.98338
25+ $28.53984
50+ $28.2689
100+ $28.12429
250+ $27.83537

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产品参数

-Length: 38.2 mm
-Width: 25.5 mm
-Manufacturer: STMicroelectronics
-Pd - Power Dissipation: 600 W
-Continuous Collector Current at 25 C: 200 A
-Brand: STMicroelectronics
-Package / Case: ISOTOP-4
-Product Category: IGBT Modules
-Height: 9.1 mm
-Unit Weight: 1 oz
-Maximum Gate Emitter Voltage: +/- 20 V
-ECCN EAR99
-Packaging: Tube
-Collector-Emitter Saturation Voltage: 1.2 V
-Series: 600-650V IGBTs
-Minimum Operating Temperature: - 55 C
-Factory Pack Quantity: 10
-RoHS:  Details
-Gate-Emitter Leakage Current: +/- 100 nA
-Collector- Emitter Voltage VCEO Max: 600 V
-Configuration: Single Dual Emitter
-Mounting Style: Through Hole
-Maximum Operating Temperature: + 150 C

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