English 简体中文 日本語

STGE200NB60S

STGE200NB60S Series N-Channel 600 V 200 A Low Drop PowerMESH IGBT - ISOTOP

Manufacturer STMicroelectronics
MPN STGE200NB60S
SPQ 1
ECCN EAR99
Schedule B --
RoHS --
Datasheet STGE200NB60S.pdf
SP1034
Dollar $34.76419
RMB ¥288.73912
Stock type SP1034
Stock num 577
Stepped
num price
10+ $34.76419
50+ $34.06893
SP1034
Dollar $35.10157
RMB ¥291.54128
Stock type SP1034
Stock num 577
Stepped
num price
1+ $35.10157

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Length: 38.2 mm
-Width: 25.5 mm
-Manufacturer: STMicroelectronics
-Pd - Power Dissipation: 600 W
-Continuous Collector Current at 25 C: 200 A
-Brand: STMicroelectronics
-Package / Case: ISOTOP-4
-Product Category: IGBT Modules
-Height: 9.1 mm
-Unit Weight: 1 oz
-Maximum Gate Emitter Voltage: +/- 20 V
-ECCN EAR99
-Packaging: Tube
-Collector-Emitter Saturation Voltage: 1.2 V
-Series: 600-650V IGBTs
-Minimum Operating Temperature: - 55 C
-Factory Pack Quantity: 10
-RoHS:  Details
-Gate-Emitter Leakage Current: +/- 100 nA
-Collector- Emitter Voltage VCEO Max: 600 V
-Configuration: Single Dual Emitter
-Mounting Style: Through Hole
-Maximum Operating Temperature: + 150 C

Copyright © 1997-2013 NetEase. All Rights Reserved.